This simulation allows you to analyze the temperature dependence of carrier concentration and energy levels in a semiconductor. Follow the steps below to use the tool effectively:

Choose Semiconductor Material

Select the type of semiconductor material (Si, Ge, or GaAs) by clicking the corresponding button under the "Semiconductor" section.

Input Semiconductor Parameters

Fill in the required parameters in the provided fields:

• N_C(300 K) and N_V(300 K): Enter the effective density of states for the conduction band (N_C) and the valence band (N_V) at 300 K in units of 1/cm³.
• E_g: Enter the energy band gap (E_g) as a function of temperature. This is usually given as a temperature-dependent equation.
• N_d: Specify the donor concentration (N_d) in units of 1/cm³.
• E_C - E_d: Input the energy difference between the conduction band edge (E_C) and donor level (E_d) in eV.
• N_a: Specify the acceptor concentration (N_a) in units of 1/cm³.
• E_a - E_V: Enter the energy difference between the acceptor level (E_a) and the valence band edge (E_V) in eV.

Select Donor and Acceptor Doping

Choose the type of donor and acceptor impurities for the semiconductor by clicking the respective buttons.

Set Temperature Range

Specify the minimum (T₁) and maximum (T₂) temperatures in Kelvin (K) for the simulation.

Run Simulation

Once all parameters are set, click the "Replot" button to generate the plots.

Interpreting the Plots

• Top Left Plot (Energy Levels vs Temperature): This plot shows the variation of energy levels (conduction band E_C, donor level E_d, Fermi level E_f, acceptor level E_a, and valence band E_V) as a function of temperature.
• Bottom Left Plot (Carrier Concentrations vs Temperature): This plot displays the logarithm (base 10) of carrier concentrations n (electron concentration), p (hole concentration), and n_i (intrinsic carrier concentration) as a function of temperature.
• Bottom Right Plot (Carrier Concentrations vs 1/Temperature): This plot shows the logarithm (base 10) of carrier concentrations as a function of 1/T, which is useful for understanding the temperature dependence of carrier concentrations.

Adjust Parameters and Replot

You can adjust any of the input parameters and click "Replot" to see how the changes affect the results.

This simulation helps in understanding the behavior of semiconductors under different doping conditions and temperature ranges.