Instructions

  1. Configure the following parameters for the n-channel MOSFET:
    • Width (W): 1 µm
    • Length (L): 0.1 µm
    • Mobility (μ): 1400 cm2/Vs
    • Maximum VDS: 10 V
    • Gate voltages (VG) ranging from 2 V to 11 V in 1 V steps
  2. Set the material properties and other physical parameters:
    • Metal work function (φm): 4.08 eV
    • Electron affinity (χs): 4.05 eV
    • Oxide thickness (tox): 3 nm
    • Oxide permittivity (εox): 4
    • Semiconductor permittivity (εsemi): 12
    • Effective density of states in conduction band (NC): 2.78 × 1019 cm-3
    • Effective density of states in valence band (NV): 9.84 × 1018 cm-3
    • Acceptor doping concentration (NA): 1 × 1017 cm-3
    • Energy gap (Eg): 1.12 eV
    • Intrinsic carrier concentration (ni): 6.4 × 109 cm-3
    • Temperature (T): 300 K
  3. Click the "Replot" or "Simulate" button to generate the plot of ID vs. VDS for the different gate voltages.
  4. Observe the resulting graph, which should display multiple curves representing ID vs. VDS for various VG values. The plot will typically show increasing ID with higher VG values.
  5. Analyze the data by noting the behavior in the linear and saturation regions:
    • Linear region: ID increases linearly with VDS.
    • Saturation region: ID becomes nearly constant for a given VG as VDS increases further.

$I_{DS}$ [mA]

$V_{DS}$ [V]
W = m
L = m
μ = cm²/Vs
VDS,max = V
Vg[1] = V
Vg[2] = V
Vg[3] = V
Vg[4] = V
Vg[5] = V
Vg[6] = V
Vg[7] = V
Vg[8] = V
Vg[9] = V
Vg[10] = V
φm = eV
χs = eV
tox = nm
εox =
εsemi =
Nc = 1/cm³
Nv = 1/cm³
NA = 1/cm³
Eg(T) = eV
T = K
C = 2 F/m²
φs = 2 eV
Eg = 2 eV
ni = 2 V
Vfb = 2 V
VT = 2 V

$V_G$ [V] $V_D$ [V] $I_D$ [mA]