Follow these steps to perform the n-channel JFET simulation:

1. Go to the simulation.
2. Input the following parameters as shown in the input boxes:
   • N_c: Effective density of states in the conduction band (measured in cm⁻³)
   • N_v: Effective density of states in the valence band (measured in cm⁻³)
   • E_g: Energy bandgap of the semiconductor (measured in electronvolts, eV)
   • N_D: Donor concentration (measured in cm⁻³), which refers to the number of donor atoms per unit volume
   • N_A: Acceptor concentration (measured in cm⁻³), which refers to the number of acceptor atoms per unit volume
   • μ_n: Electron mobility (measured in cm²/V·s), which quantifies how quickly electrons can move through a semiconductor when an electric field is applied
   • h: Thickness of the semiconductor layer (measured in micrometers, μm)
   • L: Length of the semiconductor device (measured in micrometers, μm)
   • Z: Width of the semiconductor device (measured in micrometers, μm)
   • ε_r: Relative permittivity (also known as the dielectric constant) of the semiconductor material
   • T: Temperature of the semiconductor material (Kelvin, K)
   • V_D(min): Minimum drain voltage (measured in volts, V) required for the operation of the device
   • V_g: Gate voltage (measured in volts, V), which is the voltage applied to the gate terminal of a transistor
3. Once all parameters are entered, click the Replot button to generate the IV characteristics curves.
4. Observe the plot of I_D (drain current) vs V_D (drain voltage). The x-axis represents the drain voltage (V_D) and the y-axis represents the drain current (I_D).
5. Use the buttons labeled Si, Ge, and GaAs to simulate the characteristics for different semiconductor materials.