Input Parameters

• ϕm, ϕs (Work Function of the Metal and Semiconductor): Enter the values in electron volts (eV).
• χ (Electron Affinity): Enter the electron affinity in eV.
• tox, tox2 (Oxide Thickness): Enter the oxide thickness in nanometers (nm).
• εox, εox2 (Dielectric Constants of the Oxides): Enter the dielectric constants.
• Eg (Bandgap Energy): Enter the bandgap energy using the provided formula if needed.
• Nd (Donor Concentration) and Na (Acceptor Concentration): Enter the concentration values in cm³.
• T (Temperature): Enter the operating temperature in Kelvin (K).
• εsemi (Semiconductor Dielectric Constant): Enter the value.
• V (Voltage): Input the voltage applied across the device.
• Material Selection (Si, Ge, GaAs): Choose the material of the semiconductor.

Submit

Once all parameters are entered, click the Submit button to run the simulation.

View Results

• Band Diagram: Observe the energy levels within the semiconductor, including the conduction band edge, valence band edge, and Fermi level.

Explore Different Regions

Use the Accumulation, Flatband, Depletion, Threshold, and Inversion buttons to explore different operational regions of the PMOS transistor.

Additional Notes

• The right side of the screen displays calculated parameters such as the built-in potential (ϕs), maximum depletion width (xP), surface potential (ψs), and threshold voltage (VT).
• The calculated charge (Q) and electric field (Eox) in the oxide layer are also shown.
• Make sure to adjust and explore the parameters to see how they affect the band diagram, charge density, and electric field.