1. Set the parameters for the simulation:
   • Enter the Area (A) of the diode in cm².
   • Set the Effective Density of States in the Conduction Band (N_c) and Valence Band (N_v) at 300K in cm^-3.
   • Specify the Energy Band Gap (E_g) in eV.
2. Provide details for the minority carrier properties:
   • Enter the Hole Mobility (μ_p) in cm²/V·s.
   • Set the Hole Lifetime (τ_p) in seconds.
   • Specify the Acceptor Concentration (N_a) in cm^-3.
   • Enter the Electron Mobility (μ_n) in cm²/V·s.
   • Set the Electron Lifetime (τ_n) in seconds.
   • Specify the Donor Concentration (N_d) in cm^-3.
3. Set the Temperature (T) in Kelvin.
4. Provide the external circuit parameters:
   • Enter the Applied Voltage (V_max) across the diode.
   • Set the ideality factor η.
   • Specify the Series Resistance (R_s) in ohms.
5. After filling in all the required parameters, click the Replot button to generate the simulation results.
6. Choose the material type for the simulation by selecting Si, Ge, or GaAs.
7. The simulation results will be displayed in the following formats:
   • A plot of log₁₀(I) vs. V (Voltage).
   • A table displaying the calculated current values for various voltage inputs.
   • A plot of the I (Current) vs. V (Voltage).
8. Review the simulation parameters displayed below the plots, which include calculated values such as I_S, n_i, E_g, D_p, D_n, L_p, L_n, etc.

Use the plots and the parameter values to analyze the diode's IV characteristics under different conditions.