Output Characteristics of n-channel JFET

Set Initial Parameters:
- N_A: Set the acceptor concentration in the p-region (e.g., 1e15 /cm³).
- N_D: Set the donor concentration in the n-region (e.g., 1e15 /cm³).
- V: Adjust the applied voltage (e.g., -0.5 V).
- T: Set the temperature (e.g., 300 K).
Submit Parameters:
- Click the "Submit" button to apply the set parameters.
View Results: The simulation will generate the following graphs:
- Band Diagram: Displays the energy bands across the pn junction.
- Capacitance-Voltage Characteristics: Shows the C-V curve of the diode.
- Charge Density: Illustrates the charge distribution across the junction.
- Electric Field: Displays the electric field intensity in the depletion region.
Analyze Data: Use the graphs to analyze the electrical properties of the pn junction in depletion mode. Note the following:
- Depletion Width (W): Measure the width of the depletion region.
- Built-in Potential (V_bi): Determine the built-in potential of the junction.
- Electric Field (E): Examine the electric field distribution.

\( N_A = \)		1/cm³	\( N_D = \)		1/cm³
\( E_g = \)	eV
\( N_v(300) = \)		1/cm³	\( N_c(300) = \)		1/cm³
\( \epsilon_r = \)			\( T = \)		K
\( \mu_p = \)		cm²/V s	\( \mu_n = \)		cm²/V s
\( \tau_p = \)		s	\( \tau_n = \)		s

\( V = \) V

\( E_g = \) 1.12 eV \( W = \) 1.72 μm \( x_p = \) -0.861 μm \( x_n = \) 0.861 μm \( V_{bi} = \) 0.618 V \( C_j = \) 6.17 nF/cm²

$n_i=$ $D_p=$ $D_n=$ $L_p=$ $L_n=$

Band diagram

[eV]

-3

-2

-1

0

1

2

3

-1.5

-1.0

-0.5

0.0

0.5

1.0

	$E_{Fn}$
	$E_{Fp}$

x [μm]

Charge density

ρ [C/m³]	-3 -1 0 1 2 3 200 150 100 50 0 -50 -100 -150 -200
	x [μm]

Electric field

E [V/m]	-3 -1 0 1 2 3 0 -250000 -500000 -750000 -1000000 -1250000 -1500000
	x [μm]

Capacitance - Voltage

$\frac{1}{C_j^2}$ $\left[\frac{\text{cm}^4}{\text{nF}^2}\right]$	-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07
	V [V]