Variation of Fermi Energy Level and Carrier Concentration with Temperature 
1. In an intrinsic semiconductor, what happens to the Fermi energy level as the temperature approaches absolute zero?
2. For an n-type semiconductor, what is the effect of temperature on the position of the Fermi level relative to the conduction band?
3. How does the carrier concentration in a p-type semiconductor change as temperature increases?
4. What impact does increasing temperature have on the majority carrier concentration in an n-type semiconductor?
5. In a semiconductor, how does the intrinsic carrier concentration relate to the band gap as temperature changes?
6. How does the temperature affect the density of states in the conduction band of a semiconductor?
7. What is the behavior of the Fermi level in a heavily doped p-type semiconductor with increasing temperature?
8. What happens to the hole concentration in a p-type semiconductor with a rise in temperature?
9. How does the effective mass of electrons in a semiconductor vary with temperature?
10. In a semiconductor, how does the change in Fermi energy level with temperature affect the electrical conductivity?