Electrical Properties of pn Junction in Depletion Mode 
1. What is the effect of forward bias on the depletion region of a pn junction?
2. In the context of pn junctions, what does the term 'band bending' refer to?
3. Which of the following is true about the potential difference across the depletion region under equilibrium?
4. What happens to the minority carrier concentration at the edges of the depletion region in a forward-biased pn junction?
5. In a reverse-biased pn junction, what is the dominant current mechanism?
6. What is the main reason for the increase in the depletion width under reverse bias?
7. Which of the following expressions correctly represents the built-in potential (V_bi) for a pn junction?
8. What does the term 'space charge region' refer to in a pn junction?
9. In a pn junction, what is the relationship between the electric field and the distance within the depletion region?
10. How does the recombination rate of electrons and holes in the depletion region of a pn junction compare to that in the neutral regions?