IV characteristics of a PN junction diode 
1. What is the threshold voltage in the forward bias region of a silicon PN junction diode typically around?
2. What happens to the current in a PN junction diode as the forward voltage increases beyond the threshold?
3. In reverse bias, what is the current through a PN junction diode primarily due to?
4. What is the term used to describe the voltage at which a significant increase in reverse current occurs in a diode?
5. What is the typical reverse saturation current (I_s) of a silicon diode at room temperature?
6. How does temperature affect the reverse saturation current in a PN junction diode?
7. What characteristic of a diode is defined by the region where the diode current increases rapidly with a small increase in forward voltage?
8. In the context of diode IV characteristics, what does the term 'ideal diode' refer to?
9. What effect does increasing the doping concentration in the P and N regions have on the diode's breakdown voltage?
10. In a real diode, what causes the deviation from the ideal exponential IV characteristic at high current levels?