Output Characteristics of n-channel JFET 
1. What is the role of the gate terminal in an n-channel JFET?
2. How does the drain current (I_D) respond to an increase in the drain-source voltage (V_DS) in the ohmic region of an n-channel JFET?
3. What happens to the depletion region in an n-channel JFET when the gate-source voltage (V_GS) is made more negative?
4. In the cutoff region of an n-channel JFET, what is the approximate value of the drain current (I_D)?
5. Which parameter of an n-channel JFET is defined as the voltage difference between the source and the drain when the gate-source voltage (V_GS) is zero?
6. In the context of n-channel JFETs, what is transconductance (g_m)?
7. What is the effect of increasing the gate-source voltage (V_GS) beyond the pinch-off voltage (V_P) in an n-channel JFET?
8. In an n-channel JFET, what condition signifies that the device is in the active or saturation region?
9. What happens to the channel of an n-channel JFET as the gate-source voltage (V_GS) becomes more negative?
10. In an n-channel JFET, what is the relationship between the drain-source voltage (V_DS) and the drain current (I_D) in the breakdown region?