Virtual Labs

Reverse Biasing in a P-channel JFET

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1. What happens to the channel of a P-channel JFET when it is reverse biased?

a: The channel widens Explanation

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b: The channel narrows Explanation

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c: The channel lengthens Explanation

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d: The channel remains unchanged Explanation

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2. How does the drain current (I_D) in a P-channel JFET respond to an increase in reverse bias voltage (V_GS)?

a: I_D increases Explanation

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b: I_D decreases Explanation

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c: I_D remains constant Explanation

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d: I_D oscillates Explanation

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3. What is the effect of reverse biasing on the gate-source junction of a P-channel JFET?

a: Increases current flow through the gate Explanation

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b: Decreases current flow through the gate Explanation

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c: No effect on current flow Explanation

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d: Causes breakdown of the junction Explanation

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4. In a P-channel JFET, what occurs when the gate-source voltage (V_GS) is made more positive?

a: The device enters saturation Explanation

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b: The device enters cutoff Explanation

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c: The device enters ohmic region Explanation

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d: The device breaks down Explanation

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5. What is the pinch-off voltage (V_P) in a P-channel JFET?

a: The voltage at which the channel is fully open Explanation

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b: The voltage at which the channel is fully closed Explanation

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c: The voltage at which the drain current starts to increase Explanation

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d: The voltage at which the gate-source junction becomes forward biased Explanation

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6. How does the transconductance (g_m) of a P-channel JFET vary with the reverse bias voltage (V_GS)?

a: Increases linearly Explanation

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b: Decreases linearly Explanation

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c: Increases exponentially Explanation

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d: Decreases exponentially Explanation

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7. In the reverse bias condition, what is the primary factor controlling the drain current (I_D) in a P-channel JFET?

a: Drain-source voltage (V_DS) Explanation

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b: Gate-source voltage (V_GS) Explanation

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c: Temperature Explanation

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d: Channel length Explanation

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8. What is the relationship between the drain current (I_D) and the gate-source voltage (V_GS) in the reverse bias condition for a P-channel JFET?

a: I_D is directly proportional to V_GS Explanation

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b: I_D is inversely proportional to V_GS Explanation

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c: I_D is proportional to the square of (V_GS - V_P) Explanation

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d: I_D is proportional to the exponential of V_GS Explanation

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9. What is the effect of temperature on the reverse bias characteristics of a P-channel JFET?

a: Increases I_D Explanation

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b: Decreases I_D Explanation

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c: No effect on I_D Explanation

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d: Causes I_D to oscillate Explanation

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10. In a P-channel JFET, when the gate-source voltage (V_GS) is zero, the device operates in which region?

a: Ohmic region Explanation

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b: Saturation region Explanation

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c: Cutoff region Explanation

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d: Breakdown region Explanation

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